Part Number Hot Search : 
C330K A1000 28C04 45984 N4001 TC1265 AN8036L C299P
Product Description
Full Text Search
 

To Download KGF1305T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 E2Q0037-38-71 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1305T
electronic components KGF1305T
Power FET (Ceramic Package Type)
GENERAL DESCRIPTION
The KGF1305T, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1305T specifications are guaranteed to a fixed matching circuit for 5.4 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 31.5 dBm), and low thermal resistance, the KGF1305T is ideal as a transmitter-final-stage amplifier for personal handy phones, such as analog cellular phones.
FEATURES
* High output power: 31.5 dBm (min.) * High efficiency: 66% (min.) * Low thermal resistance: 12C/W (typ.) * Package: 3PHTP
PACKAGE DIMENSIONS
1.70.2
0.50.05
4.70.15
5.9 MAX
4.50.15
0.630.15 1.10.15 3.10.15
0.1250.05
2.30.05 3.30.15 7.30.15 (Unit: mm)
Package material Lead frame material Pin treatment plate thickness Al203 Fe-Ni-Co alloy Ni/Au plating Au:1.0 mm or more
3.50.05
1/6
electronic components
KGF1305T
MARKING
(1)
(2)
K1305 XXXX
PRODUCT NAME LOT NUMBER
MONTHLY LOT NUMBER (3) PRODUCTION MONTH (1-9,X,Y,Z) PRODUCTION YEAR (LOWEST DIGIT) (1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
2/6
electronic components
KGF1305T
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -6.0 -- -- -- -45 Max. 10 0.4 2 3 150 125
ELECTRICAL CHARACTERISTICS
Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Transconductance Output power Drain efficiency Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) gm PO hD Rth Condition VGS = -6 V VGD = -16 V VDS = 10 V, VGS = -6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 3 mA VDS = 3 V, IDS = 400 mA (*1), PIN = 20 dBm (*1), PIN = 20 dBm Channel to case Unit mA mA mA A V mS dBm % C/W Min. -- -- -- 1.3 -4.0 400 31.5 66 -- Typ. -- -- -- -- -- -- 31.8 70 12
(Ta = 25C) Max. 0.3 1 3 -- -2.5 -- -- -- --
*1 Condition: f = 850 MHz, VDS = 5.4 V, IDSQ = 150 mA
3/6
electronic components
KGF1305T
RF CHARACTERISTICS
4/6
electronic components
KGF1305T
Typical S Parameters
VDS = 5.4 V, IDS = 150 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.904 0.898 0.898 0.892 0.893 0.888 0.888 0.885 0.884 0.883 0.878 0.880 0.873 0.874 0.871 0.867 0.866 0.863 0.856 0.860 0.847 0.854 0.841 0.850 0.838 0.844 -138.10 -146.17 -152.00 -156.82 -160.44 -163.81 -166.54 -169.05 -171.16 -173.32 -174.86 -177.08 -178.47 -179.87 178.63 177.01 175.77 174.18 172.90 171.57 170.24 169.02 167.89 166.46 165.72 163.92 5.672 4.851 4.235 3.758 3.391 3.060 2.818 2.590 2.411 2.252 2.111 1.989 1.889 1.785 1.701 1.625 1.542 1.492 1.418 1.380 1.322 1.277 1.234 1.198 1.158 1.129 98.26 92.74 88.47 84.26 80.99 77.53 74.38 71.44 68.47 65.86 63.20 60.74 58.26 55.72 53.82 50.52 49.03 46.22 44.00 42.12 38.98 37.70 35.03 32.92 31.37 28.48 0.039 0.040 0.041 0.042 0.042 0.043 0.044 0.044 0.045 0.046 0.046 0.047 0.048 0.048 0.049 0.050 0.051 0.052 0.053 0.053 0.055 0.055 0.057 0.057 0.059 0.060 24.98 22.59 21.11 19.99 19.30 18.66 18.46 18.11 18.37 17.92 18.30 17.80 18.05 18.18 17.95 18.30 18.37 18.16 18.38 18.08 18.28 18.17 18.12 18.16 17.98 17.83 0.516 0.524 0.529 0.533 0.536 0.538 0.537 0.542 0.539 0.546 0.540 0.545 0.541 0.547 0.541 0.546 0.541 0.546 0.542 0.542 0.543 0.539 0.544 0.539 0.543 0.539 -166.92 -169.30 -170.80 -172.27 -173.15 -174.21 -174.79 -175.71 -176.29 -176.97 -177.67 -178.16 -178.96 -179.40 179.67 179.38 178.08 178.00 176.66 176.41 175.31 174.80 173.75 173.20 171.95 171.42
5/6
electronic components
KGF1305T
Typical S Parameters
VDS = 5.4 V, IDS = 150 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
6/6


▲Up To Search▲   

 
Price & Availability of KGF1305T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X